The Art & Science of Wafer Cleaning & Selective Wet ETCHINg
Pioneering Solutions for Fin Thinning (UTBT), Si & SiGe Nanowires, and nanosheets for Gate-All-Around (GAA) Transistor Fabrication Technology
As semiconductor manufacturing pushes toward advanced nodes, new architectures like Si and SiGe nanowires and nanosheets Gate-All-Around (GAA) transistors are essential to meet the demands for smaller, faster, and more energy-efficient devices. Our company specializes in developing cutting-edge chemical formulations that enable the precise fabrication of these next-gen structures.
Our innovative chemical strategies are built to support breakthroughs in transistor technology, positioning your fab for success in the ultra-competitive, cutting-edge semiconductor market.
With our custom-designed chemistries, we help semiconductor fabs:
·Fabricate Si and SiGe Nanowires: Our formulations provide the right balance of selectivity, precision, and control, enabling high-quality nanowires essential for advanced logic and memory devices.
·Achieve Scalability for Next-Gen Devices: Our formulations are developed with the foresight to meet the challenges of the future of semiconductor scaling, ensuring seamless integration into evolving fabs and next-generation equipment.
Innovative Selective Wet Etching Allows for the Fabrication of Nanoscale Features Creating Future Generations of 3D Architecture
Our formulations are engineered to deliver precision, consistency, and reliability in the most demanding process environments. We work side-by-side with your engineers to customize formulations that integrate seamlessly into your process flow.